? by semikron 0698 b 16 C 57 absolute maximum ratings symbol conditions 1) values units inverter (chopper see skiip 22 nab 12) v ces v ges i c i cm i f = Ci c i fm = Ci cm t heatsink = 25 / 80 c t p < 1 ms; t heatsink = 25 / 80 c t heatsink = 25 / 80 c t p < 1 ms; t heatsink = 25 / 80 c 1200 20 45 / 30 90 / 60 38 / 26 76 / 52 v v a a a a bridge rectifier v rrm i d i fsm i 2 t t heatsink = 80 c t p = 10 ms; sin. 180 , t j = 25 c t p = 10 ms; sin. 180 , t j = 25 c 1500 35 700 2400 v a a a 2 s t j t stg v isol ac, 1 min. C 40 . . . + 150 C 40 . . . + 125 2500 c c v characteristics symbol conditions 1) min. typ. max. units igbt - inverter v cesat t d(on) t r t d(off) t f e on + e off c ies r thjh i c = 30 a t j = 25 (125) c v cc = 600 v; v ge = 15 v i c = 30 a; t j = 125 c r gon = r goff = 39 w inductive load v ce = 25 v; v ge = 0 v, 1 mhz per igbt C C C C C C C C 2,5(3,1) 55 55 400 45 7,8 2,0 C 3,0(3,7) 110 110 600 90 C C 0,7 v ns ns ns ns mj nf k/w igbt - chopper * v cesat t d(on) t r t d(off) t f e on + e off c ies r thjh i c = 15 a t j = 25 (125) c v cc = 600 v; v ge = 15 v i c = 15 a; t j = 125 c r gon = r goff = 82 w inductive load v ce = 25 v; v ge = 0 v, 1 mhz per igbt C C C C C C C C 2,5(3,1) 55 45 400 70 4,0 1,0 C 3,0(3,7) 110 90 600 100 C C 1,4 v ns ns ns ns mj nf k/w diode 2) - inverter (diode 2) - chopper see skiip 22 nab 12) v f = v ec v to r t i rrm q rr e off r thjh i f = 25 a t j = 25 (125) c t j = 125 c t j = 125 c i f = 25 a, v r = C 600 v di f /dt = C 500 a/ m s v ge = 0 v, t j = 125 c per diode C C C C C C C 2,0(1,8) 1,0 32 25 4,5 1,0 C 2,5(2,3) 1,2 44 C C C 1,2 v v m w a m c mj k/w diode - rectifier v f r thjh i f = 35 a, t j = 25 c per diode C C 1,2 C C 1,6 v k/w temperature sensor r ts t = 25 / 100 c 1000 / 1670 w mechanical data m 1 case case to heatsink, si units mechanical outline see page b 16 C 9 2C m3 2,5 nm skiip 31 nab 12 miniskiip 3 semikron integrated intelligent power skiip 31 nab 12 3-phase bridge rectifier + braking chopper + 3-phase bridge inverter case m3 ul recognized file no. e63532 ? specification of temperature sensor see part a ? common characteristics b 16 C 4 options ? also available with powerful chopper. for characteristics please refer to inverter igbt 1) t heatsink = 25 c, unless otherwise specified 2) cal = controlled axial lifetime technology (soft and fast recovery) * for diagrams of the chopper igbt please refer to skiip 22 nab 12
b 16 C 58 0698 ? by semikron fig. 3 turn-on /-off energy = f (i c ) fig. 4 turn-on /-off energy = f (r g ) t j = 125 c v ce = 600 v v ge = 15 v i c = 35 a t j = 125 c v ce = 600 v v ge = 15 v r g = 39 w i cpuls = 35 a v ge = 0 v f = 1 mhz fig. 1 typ. output characteristic, t p = 80 m s; 25 c fig. 2 typ. output characteristic, t p = 80 m s; 125 c fig. 5 typ. gate charge characteristic fig. 6 typ. capacitances vs. v ce
b 16 C 4 0698 ? by semikron t j = 150 c v ge = 15 v t sc = 10 m s l ext < 25 nh t j = 150 c v ge = 15 v t j = 150 c v ge = 3 15 v fig. 9 turn-off safe operating area (rbsoa) of the igbt fig. 10 safe operating area at short circuit of the igbt fig. 7 rated current of the igbt i cop / i c = f (t h ) 0 0.2 0.4 0.6 0.8 1.0 1.2 0 25 50 75 100 125 150 i cop /i c mini1207 t h [c] 0 0,5 1 1,5 2 2,5 0 500 1000 1500 i cpuls /i c mini1209 v ce [v] 0 2 4 6 8 10 12 0 500 1000 1500 note: *allowed numbers of short circuit:<1000 *time between short circuit:>1s i csc /i cn mini1210 v ce [v] fig. 11 typ. freewheeling diode forward characteristic fig. 12 forward characteristic of the input bridge diode miniskiip 1200 v
miniskiip 3 skiip 30 nab 06 skiip 31 nab 06 skiip 32 nab 06 skiip 30 nab 12 skiip 31 nab 12 skiip 32 nab 12 circuit case m3 layout and connections for the customers printed circuit board
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